SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The F1225R12KT4GBOSA1 is a silicon IGBT module from Infineon Technologies, belonging to the Trench/Fieldstop IGBT4 series. It features a 12-pack configuration with a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 25 A at 25°C. The typical collector-emitter saturation voltage is 1.85 V, while the gate-emitter leakage current is limited to 100 nA. The module supports a power dissipation of 160 W and operates within a temperature range of -40°C to +150°C. Packaged in EconoPACK, it utilizes standard Si technology for industrial applications.
Verify the complete part number including the BOSA1 suffix against official Infineon documentation to ensure correct RoHS compliance status and specific manufacturing batch details. Confirm that the supplier provides genuine components with traceable origin. Request the latest datasheet version to validate technical parameters before finalizing procurement orders.
Select this module when a design requires twelve isolated switching channels within a constrained footprint. Ensure the thermal interface material and heatsink capacity can handle the specified 160 W power dissipation. Verify that the control circuitry can manage the gate charge requirements for the total array of devices simultaneously.
This component is part of the broader IGBT4 product family, which employs trench gate and field-stop technologies to enhance efficiency compared to previous generations. The EconoPACK form factor is widely adopted in industrial drives and power supplies for its standardized mounting dimensions and reliable thermal performance.
Direct replacements must match the 12-pack configuration, 1.2 kV rating, and 25 A current capability. Consider the F12-25R12KT4G as a potential alternative within the same series, verifying pin compatibility and electrical specifications against the original datasheet.