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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The F3L150R07W2H3B11BPSA1 is a six-pack IGBT module utilizing Trench/Fieldstop H3 technology and rapid diodes within the EasyPACK™ package. It features PressFIT contact technology and an integrated NTC thermistor for thermal monitoring. The module provides a collector-emitter voltage of 650 V, with implemented nominal currents of 150 A and repetitive peak currents up to 300 A. Key electrical parameters include a maximum isolation test voltage of 3.0 kV RMS, a typical gate threshold voltage of 5.75 V, and a junction-to-heatsink thermal resistance of 0.771 K/W per IGBT.
Verify component authenticity by cross-referencing the manufacturer's serial number and material number against official Infineon databases. Confirm that the specific ordering suffix matches the required technical specifications, as variations may exist within the product family. Ensure compliance with industrial qualification standards such as IEC 60747, 60749, and 60068 before integration into final designs.
Select this module for designs requiring 650 V blocking capability and high current handling up to 150 A continuous operation. The low stray inductance of 15 nH makes it suitable for high-frequency switching environments. Consider the integrated NTC thermistor for precise temperature management and the PressFIT interface for simplified assembly processes in industrial power conversion systems.
This component belongs to the Infineon EasyPACK™ series, designed for compact and efficient power integration. It utilizes Trench/Fieldstop H3 IGBT technology paired with rapid recovery diodes. The module is qualified for industrial applications, ensuring reliability under rigorous testing conditions defined by international semiconductor standards.
Consult official Infineon documentation for verified substitute part numbers. Do not assume functional equivalence based on similar naming conventions or generic package types without explicit datasheet confirmation.
The module supports an isolation test voltage of 3.0 kV RMS at 50 Hz for 1 minute.
An integrated NTC thermistor is included, featuring a rated resistance of 5 kΩ at 25°C and a B-value of 3375 K (B25/50).
The typical gate threshold voltage is 5.75 V, measured at a collector current of 2.4 mA and VCE = VGE at 25°C.