F3L225R12W3H3B11BPSA1

$110.80

Description：IGBT MODULE
Series：EasyPACK™

SKU:6a82e05c9dce Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MODULE
Series：EasyPACK™
Mfr：Infineon Technologies
Package：Tray
IGBT Type：Trench Field Stop
Configuration：-
Vce(on) (Max) @ Vge, Ic：2.55V @ 15V, 225A
Input：Standard
NTC Thermistor：Yes
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：225 A
Power - Max：-
Current - Collector Cutoff (Max)：1 mA
Input Capacitance (Cies) @ Vce：13100 pF @ 25 V

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F3L225R12W3H3B11BPSA1

Overview

The F3L225R12W3H3B11BPSA1 is a three-level IGBT module from Infineon Technologies, utilizing TRENCHSTOP™ IGBT H3 technology and emitter controlled 7 diodes. It features a collector-emitter voltage of 1200 V and nominal currents of 225 A (ICN) with a repetitive peak current of 450 A. The module incorporates PressFIT contact technology and an integrated NTC temperature sensor. Key electrical parameters include a typical saturation voltage of 2.55 V at 25 °C and a maximum operating junction temperature of 150 °C. It is designed for high power density applications in energy storage and solar systems.

Feature Summary

High-speed switching performance enabled by TRENCHSTOP™ IGBT H3 technology
Integrated NTC thermistor for precise thermal monitoring
PressFIT contact technology for reliable assembly without soldering
Optimized low switching losses for improved system efficiency

Applications

Energy storage systems
Solar applications
Three-level inverter topologies

Procurement Notes

Verify the specific ordering suffix B11 against official documentation to confirm package and terminal configuration. Ensure compatibility with recommended mounting torque specifications and application notes for PressFIT installation. Confirm that the intended operating conditions remain within the validated insulation coordination and thermal resistance limits defined in the datasheet.

Selection Notes

Select this module for designs requiring high current density and low switching losses in three-level configurations. Evaluate the thermal management requirements based on the specified junction-to-heat sink thermal resistance values. Ensure the gate driver circuitry supports the required ±15 V drive levels and accounts for the internal gate resistance characteristics for optimal switching performance.

Part Context

This component belongs to the EasyPACK™ module family, which is engineered for compact power electronics designs. The integration of H3 IGBTs and EC7 diodes represents a focus on reducing energy consumption in industrial drives and renewable energy converters. The module is qualified for industrial applications according to relevant IEC standards.