F3L75R12W1H3B27BOMA1

$28.14

Description：IGBT MOD 1200V 45A 275W
Series：-

SKU:b2b211cb7314 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MOD 1200V 45A 275W
Series：-
Mfr：Infineon Technologies
Package：Tray
IGBT Type：-
Configuration：Three Phase Inverter
Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 30A
Input：Standard
NTC Thermistor：Yes
Operating Temperature：-40°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：45 A
Power - Max：275 W
Current - Collector Cutoff (Max)：1 mA
Input Capacitance (Cies) @ Vce：4.4 nF @ 25 V

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F3L75R12W1H3B27BOMA1

Overview

The Infineon F3L75R12W1H3_B27 is a 3-level IGBT module utilizing High Speed IGBT H3 technology. It features a collector-emitter voltage of 1200 V and a continuous DC collector current of 45 A at 25°C. The package is EasyPack1B with PressFIT contact technology. Key electrical parameters include a typical VCEsat of 1.45 V, total power dissipation of 275 W, and gate-emitter peak voltage of +/-20 V. Operating temperature ranges from -40°C to +150°C.

Feature Summary

High speed switching performance with low inductive design
Low saturation voltage and switching losses
Integrated mounting clamps for rugged assembly
Al2O3 substrate with low thermal resistance

Applications

3-level applications
Solar applications

Procurement Notes

Verify the exact ordering suffix against official documentation before purchase. Confirm that the specific variant matches the required technical specifications and insulation ratings. Ensure compatibility with the intended application environment and mounting requirements.

Selection Notes

Select this module for designs requiring high-speed switching and low conduction losses. Consider the 1200 V rating and 45 A continuous current capability. Evaluate thermal management needs based on the specified power dissipation and thermal resistance values.

Part Context

This component belongs to the High Speed IGBT H3 series by Infineon Technologies. It is designed for efficient power conversion in demanding industrial and renewable energy applications. The module integrates advanced silicon technology within a compact EasyPack housing.