ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT MOD 600V 130A 445W
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk,Bulk
- IGBT Type：-
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：2.45V @ 15V, 100A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：130 A
- Power - Max：445 W
- Current - Collector Cutoff (Max)：500 µA
- Input Capacitance (Cies) @ Vce：-
Download product information
Overview
The BSM100GB60DLCHOSA1 is a dual IGBT module manufactured by Infineon Technologies. It features a collector-emitter voltage (VCES) of 600 V and a nominal continuous collector current (IC,nom.) of 100 A at Tc=70°C, with a maximum DC collector current of 130 A at Tc=25°C. The repetitive peak collector current reaches 200 A for 1 ms pulses. Total power dissipation is rated at 445 W at Tc=25°C. The integrated diode supports a DC forward current of 100 A and a repetitive peak forward current of 200 A. Maximum junction temperature is 150 °C, with an operating temperature range from -40 °C to 125 °C.
Feature Summary
- Dual configuration integrating both IGBT and freewheeling diode functions within a single compact package.
- High thermal performance capability with a maximum junction temperature rating of 150 °C.
- Robust electrical isolation with an insulation test voltage of 2.5 kV RMS.
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific ordering suffix HOSA1 against official documentation to confirm exact manufacturing lot details or regional compliance variations. Confirm availability status as older generation modules may have limited supply chains. Ensure proper handling procedures are followed due to the sensitivity of semiconductor components during storage and installation.
Selection Notes
Select this component when a 600 V rating and 100 A continuous current capacity are required in a dual IGBT topology. Evaluate the thermal resistance values provided in the datasheet to ensure adequate heatsinking for the intended duty cycle. Consider the switching energy characteristics relative to the gate resistor requirements for optimal performance in high-frequency applications.
Part Context
This module belongs to the BSM DLC series, designed for general-purpose power conversion. It utilizes standard screw mounting mechanisms for secure mechanical attachment to heatsinks. The package dimensions and terminal layout are standardized to facilitate integration into existing industrial power electronics designs requiring reliable mid-power switching solutions.
Replacement Considerations
Direct replacements must match the 600 V / 100 A dual IGBT specification and compatible pinout. Verify thermal resistance and package dimensions before substitution. Cross-reference with newer Infineon generations like EconoPACK if space constraints allow, ensuring electrical parameters meet or exceed original requirements.
FAQ
What is the maximum junction temperature for the BSM100GB60DLCHOSA1?
The maximum junction temperature (Tvj) is 150 °C.
What is the insulation test voltage rating?
The insulation test voltage (VISOL) is 2.5 kV RMS at 50 Hz for 1 minute.
What is the typical turn-off delay time at 125 °C?
The typical turn-off delay time (td,off) is 150 ns under conditions of IC=100A, VCC=300V, VGE=±15V, RG=2.2Ω, and Tvj=125°C.
