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The F4100R17ME4B11BPSA2 is a silicon IGBT module from Infineon Technologies, belonging to the EconoDUAL 3 series. It features a trench field-stop technology and a full-bridge inverter configuration. The device supports a maximum collector-emitter voltage of 1700 V and a continuous collector current of 155 A at 25°C. The saturation voltage is specified as 2.3 V under standard test conditions. Operating temperatures range from -40°C to +150°C junction temperature. The component utilizes a baseplate mounting style within a module package.
Verify part authenticity through authorized channels. Confirm RoHS compliance status via official documentation. Check for specific ordering suffix variations that may indicate minor revisions. Ensure compatibility with existing thermal interface materials. Validate supply chain sources against manufacturer lists.
Compare collector current ratings against peak load requirements. Evaluate thermal resistance characteristics for heatsink design. Consider gate drive voltage compatibility with control circuits. Assess switching frequency limitations based on application needs. Review mechanical dimensions for PCB layout integration.
This component is part of Infineon's EconoDUAL 3 family, which provides standardized form factors for power electronics. It succeeds earlier generations like the EconoPACK series, offering improved thermal performance and compact design. The model shares architectural similarities with other F41xxR17 variants but differs in current handling capabilities.
Direct substitutes include F4100R17ME4B11BPSA1, which represents an earlier revision of the same functional specification. Cross-reference pinouts and thermal characteristics when transitioning between revisions. Verify if updated versions offer enhanced reliability or modified electrical parameters.