F410MR20W3M1HB11BPSA1

$382.44

Description：EASY STANDARD PLUS
Series：EasyPACK™

SKU:85c54e32a3dd Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

F410MR20W3M1HB11BPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is EASY STANDARD PLUS. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for F410MR20W3M1HB11BPSA1

Description：EASY STANDARD PLUS
Series：EasyPACK™
Mfr：Infineon Technologies
Package：Tray
Technology：Silicon Carbide (SiC)
Configuration：4 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：2000V (2kV)
Current - Continuous Drain (Id) @ 25°C：95A (Tj)
Rds On (Max) @ Id, Vgs：13.3mOhm @ 120A, 18V
Vgs(th) (Max) @ Id：5.15V @ 68mA
Gate Charge (Qg) (Max) @ Vgs：470nC @ 3V
Input Capacitance (Ciss) (Max) @ Vds：14500pF @ 1200V
Power - Max：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for F410MR20W3M1HB11BPSA1

F410MR20W3M1HB11BPSA1

FET, MOSFET Arrays Overview

The Infineon F410MR20W3M1HB11BPSA1 is a CoolSiC Trench MOSFET module in the EasyPACK™ package. It features a 2000 V drain-source voltage and supports a continuous DC drain current of 95 A at 175°C junction temperature, with a repetitive peak current of 240 A. The typical on-state resistance is 13.3 mΩ at 25°C. Operating temperatures range from -40°C to +175°C. The module utilizes PressFIT technology for mounting and includes an integrated NTC thermistor.

FET, MOSFET Arrays Feature Summary

Utilizes CoolSiC Trench MOSFET technology for high-voltage operation up to 2000 V.
Incorporates PressFIT contact technology for secure mechanical connection.
Features an integrated NTC temperature sensor for thermal monitoring.
Designed for overload operation at elevated junction temperatures.

FET, MOSFET Arrays Applications

EV charging
Energy storage systems (ESS)
Solar applications
DC/DC converter

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing design specifications. Confirm that the selected gate driver is compatible with the recommended operating voltages. Ensure the application environment meets the industrial qualification standards defined by IEC 60747, 60749, and 60068.

FET, MOSFET Arrays Selection Notes

Select this component for high-power applications requiring robust 2000 V blocking capability. Consider the low stray inductance and optimized switching characteristics for efficiency. Verify compatibility with recommended gate drive voltages and ensure adequate thermal management for the specified power dissipation levels.

FET, MOSFET Arrays Part Context

This part belongs to the Infineon EasyPACK™ series of power modules. It integrates silicon carbide (SiC) MOSFETs designed for demanding power conversion environments. The module architecture supports single-channel configurations suitable for various high-efficiency power electronics designs.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon documentation for verified substitute part numbers. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions.