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Product Detailed Parameters
- Description：LOW POWER ECONO
- Series：*
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Configuration：-
- Vce(on) (Max) @ Vge, Ic：-
- Input：-
- NTC Thermistor：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Power - Max：-
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：-
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Overview
The F4150R12KS4BOSA1 is a four-pack IGBT module from Infineon's IGBT2 Fast series, housed in an EconoDUAL package. It features a collector-emitter voltage of 1200 V and a continuous DC collector current of 180 A at 25°C. The saturation voltage is 3.2 V at 150 A and 25°C. Total power dissipation reaches 960 W at 25°C case temperature. The module includes integrated freewheeling diodes with a forward voltage of 2.3 V at 150 A. An NTC thermistor with a nominal resistance of 5 kΩ at 25°C is included for thermal monitoring.
Feature Summary
- Four-pack configuration integrating IGBTs and anti-parallel diodes within a single insulated module.
- Integrated NTC thermistor provides precise junction temperature monitoring capabilities.
- EconoDUAL housing design facilitates efficient thermal management via the copper baseplate.
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm exact electrical characteristics and packaging details. Ensure that the component matches the required insulation class and mounting torque specifications for the target application environment.
Selection Notes
Evaluate the thermal resistance values to ensure adequate heatsinking for the intended duty cycle. Confirm that the gate drive voltage aligns with the specified threshold and peak limits to prevent device damage or improper switching behavior during operation.
Part Context
This component belongs to the F4-150R12KS4 product family manufactured by Infineon Technologies. It utilizes silicon technology and is designed for high-power switching applications requiring robust performance and reliable thermal handling in industrial environments.
Replacement Considerations
Consult official replacement lists for verified substitutes. Cross-reference pinouts and thermal resistance parameters before implementation to ensure mechanical and electrical compatibility.
FAQ
What is the maximum repetitive peak collector current?
The maximum repetitive peak collector current is 300 A for a pulse duration of 1 ms.
Does the module include short-circuit capability?
Yes, the module supports short-circuit conditions up to 900 A for durations not exceeding 10 µs at a junction temperature of 125°C.
What is the isolation test voltage rating?
The isolation test voltage is rated at 2.5 kV RMS for one minute at 50 Hz frequency.
