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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The F417MR12W1M1HB76BPSA1 is a CoolSiC™ Trench MOSFET module in the EasyPACK™ package. It features a 1200 V drain-source voltage and a continuous DC drain current of 45 A at 175 °C junction temperature. The on-state resistance is 16.2 mΩ at 25 °C, rising to 34.7 mΩ at 175 °C. Switching losses include turn-on energy of 0.773 mJ and turn-off energy of 0.186 mJ at 25 °C. The module integrates an NTC thermistor with a rated resistance of 5 kΩ at 25 °C.
Verify the component against the official Infineon datasheet IFX-ABC098-002. Confirm that the ordering suffix B76 corresponds to the EasyPACK™ package with PressFIT contacts and NTC integration. Ensure the specific revision matches the required electrical characteristics before procurement.
Select this module for applications requiring high current density and low switching losses. Verify that the gate drive voltages align with the recommended window of 15 to 18 V for positive and -5 to 0 V for negative states. Consider the thermal resistance of 1.09 K/W when designing the heatsink interface.
This part belongs to the CoolSiC™ M1H series from Infineon Technologies. It utilizes silicon carbide trench MOSFET technology within the EasyPACK™ form factor. The module is designed for industrial applications and validated according to IEC standards for reliability.
Check for other variants within the F4-17MR12W1M1H family. Substitutes must match the 1200 V rating, 50 A nominal current, and EasyPACK™ mechanical footprint. Verify if alternative ordering suffixes provide identical electrical parameters or different packaging options.