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The F4200R12N3H3FB11BPSA1 is a silicon IGBT module from Infineon Technologies, belonging to the EconoDUAL family. It features a 1.2 kV collector-emitter voltage and a continuous collector current of 200 A at 25°C. The device utilizes Trench/Fieldstop technology with a saturation voltage of 1.55 V. It operates within a temperature range of -40°C to +175°C and uses a through-hole installation style.
Verify the specific datasheet revision and ordering suffixes when sourcing this component. Confirm that the required thermal interface materials and mounting hardware are compatible with the EconoDUAL package dimensions. Ensure that gate drive circuits support the specified voltage levels and current requirements for reliable operation.
Select this module for applications requiring high voltage blocking capability and significant current handling in a compact form factor. Consider the thermal resistance and cooling requirements associated with the 200 A rating. Evaluate the switching losses against system efficiency targets compared to alternative technologies.
This part belongs to Infineon's IGBT module portfolio, specifically the EconoDUAL series. These modules are designed for medium to high-power applications, offering robust performance and reliability. The product line emphasizes ease of integration and thermal management for demanding industrial environments.
Direct substitutes may include other Infineon EconoDUAL modules with similar voltage and current ratings, such as the F4200R17N3E4BPSA1, though voltage differences must be accounted for. Cross-manufacturer replacements require careful evaluation of pinout compatibility and electrical parameters.