F450R12KS4B11BPSA1

Overview

The Infineon F450R12KS4B11BPSA1 is a half-bridge IGBT module in the EconoPACK2 package. It features an IGBT2 technology with a collector-emitter voltage (VCES) of 1200 V and a continuous DC collector current (IC nom) of 50 A at TC=70°C, or 70 A at TC=25°C. The repetitive peak collector current (ICRM) is 100 A. The typical collector-emitter saturation voltage (VCE sat) is 3.2 V at Tvj=25°C and 3.85 V at Tvj=125°C. Total power dissipation (Ptot) is 355 W. The integrated diode has a forward voltage (VF) of 2.0 V at Tvj=25°C. Thermal resistance from junction to case is 0.35 K/W for the IGBT and 0.70 K/W for the diode. The module includes an NTC thermistor with a rated resistance of 5 kΩ at 25°C.

Feature Summary

• High short-circuit capability with self-limiting short-circuit current
• Low switching losses optimized for high-frequency operation
• PressFIT contact technology combined with an isolated copper baseplate

Applications

• Inductive heating systems
• Welding equipment
• Uninterruptible Power Supply (UPS) systems

Procurement Notes

Verify the specific ordering suffix B11 against official documentation to confirm component specifications. Ensure that the procurement channel provides valid traceability data. Confirm RoHS compliance status through the manufacturer's declaration. Validate the production date code on the module label against current inventory requirements. Check for any specific handling instructions related to the PressFIT termination style.

Selection Notes

Select this module for applications requiring robust short-circuit tolerance and low switching losses. The 1200 V rating suits medium-voltage industrial drives and power supplies. Consider the thermal resistance values when designing heatsink solutions. The integrated NTC thermistor facilitates precise temperature monitoring. Verify that the gate drive circuitry supports the specified internal gate resistor and charge requirements.

Part Context

This component belongs to the Infineon EconoPACK2 series, designed for compact power electronics. It utilizes IGBT2 technology, which balances switching speed and conduction losses. The module integrates a fast recovery diode alongside the IGBT switch. This configuration is standard for half-bridge inverter topologies in industrial power conversion.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.