F475R12KS4B11BPSA1

Overview

The F475R12KS4B11BPSA1 is an IGBT module from Infineon Technologies, utilizing the EconoPACK™2 package and IGBT2 technology. It features a collector-emitter voltage (VCES) of 1200 V and a nominal continuous DC collector current (ICDC) of 75 A at a case temperature of 65 °C. The module supports a repetitive peak collector current (ICRM) of 150 A and includes an integrated NTC thermistor with a rated resistance of 5 kΩ at 25 °C. Electrical characteristics include a typical saturation voltage (VCEsat) of 3.2 V at 25 °C and a forward voltage (VF) of 2.0 V for the diode at 25 °C. The insulation test voltage is 2.5 kV RMS.

Feature Summary

• Utilizes PressFIT contact technology for mechanical connection to the heatsink.
• Features an isolated copper base plate with basic insulation according to IEC 61140.
• Incorporates fast IGBT2 technology designed for high-frequency switching applications.
• Includes an integrated NTC thermistor for reliable thermal monitoring.

Applications

• Inductive heating systems
• Welding equipment
• Uninterruptible Power Supply (UPS) systems

Procurement Notes

Verify component authenticity by cross-referencing the unique serial number and material code printed on the module label against official Infineon databases. Ensure that the ordering suffix matches the specific technical configuration required for the design. Confirm compliance with relevant industrial standards such as IEC 60747 and IEC 60068 prior to integration into final products.

Selection Notes

Select this module for designs requiring robust short-circuit capability and low switching losses within the 1200 V class. Evaluate the thermal resistance parameters, specifically RthJC, to ensure adequate heat dissipation for the intended operating conditions. Verify that the gate drive circuitry can accommodate the specified gate charge and internal resistor values for optimal switching performance.

Part Context

This component belongs to the EconoPACK™2 series, which provides a compact and standardized housing suitable for various power electronics applications. The module integrates both IGBT switches and anti-parallel diodes in a single unit, simplifying circuit layout and reducing parasitic inductance compared to discrete solutions.

Replacement Considerations

Direct replacements must match the 1200 V rating, 75 A nominal current, and EconoPACK™2 footprint. Verify pinout compatibility and thermal resistance specifications before substitution. Consult Infineon documentation for updated series modules offering enhanced electrical characteristics or improved packaging options.

FAQ

What is the maximum isolation test voltage for this module?

The module supports an isolation test voltage (VISOL) of 2.5 kV RMS at 50 Hz for one minute.

How does the module handle short-circuit conditions?

The module exhibits high short-circuit capability, supporting a short-circuit current (ISC) of up to 450 A for pulse durations up to 10 µs at a junction temperature of 125 °C.

What is the function of the integrated NTC thermistor?

The NTC thermistor provides thermal monitoring with a rated resistance of 5 kΩ at 25 °C, allowing for accurate tracking of the module's temperature during operation.