F48MR12W2M1HB70BPSA1

F48MR12W2M1HB70BPSA1

$154.11
  • Description:LOW POWER EASY
  • Series:-

SKU:e715fddf3df9 Category: Brand:

  
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Product Detailed Parameters

  • Description:LOW POWER EASY
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • IGBT Type:-
  • Configuration:-
  • Vce(on) (Max) @ Vge, Ic:-
  • Input:-
  • NTC Thermistor:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Current - Collector (Ic) (Max):-
  • Power - Max:-
  • Current - Collector Cutoff (Max):-
  • Input Capacitance (Cies) @ Vce:-

Download product information

F48MR12W2M1HB70BPSA1

Overview

The F48MR12W2M1HB70BPSA1 is a CoolSiC™ MOSFET half-bridge module in the EasyPACK™ package. It features a 1200 V drain-source voltage and a continuous DC drain current of 100 A at 175 °C junction temperature, with a repetitive peak current rating of 200 A. The on-state resistance is typically 8.1 mΩ at 25 °C. The module utilizes PressFIT contact technology and includes an integrated NTC thermistor for thermal monitoring. It employs an AlN substrate to achieve low thermal resistance.

Feature Summary

  • Low inductive design architecture
  • Integrated NTC temperature sensor
  • PressFIT contact technology
  • AlN substrate with low thermal resistance

Applications

  • High-frequency switching applications
  • DC/DC converters
  • UPS systems
  • EV DC chargers

Procurement Notes

Verify the specific ordering suffix B70 against official Infineon documentation to confirm exact manufacturing lot codes and compliance status. Ensure that gate driver selection aligns with the recommended operating voltages specified in the datasheet. Confirm mechanical mounting force requirements match the application constraints before procurement.

Selection Notes

Select this component for high-density power conversion designs requiring low switching losses. Evaluate the thermal management strategy based on the provided RthJH value. Verify that the system's maximum operating temperature remains within the -40 °C to +175 °C range. Consider the stray inductance value when designing PCB layouts for optimal performance.

Part Context

This part belongs to the Infineon CoolSiC™ M1H series, utilizing Trench MOSFET technology. It is designed as a direct replacement or upgrade for silicon-based modules in high-efficiency applications. The EasyPACK™ form factor ensures compatibility with standard mounting solutions used in industrial power electronics.

Replacement Considerations

Consult the official cross-reference list for verified substitutes. Ensure any alternative maintains equivalent voltage ratings, current capabilities, and thermal characteristics.

F48MR12W2M1HB70BPSA1F48MR12W2M1HB70BPSA1
$154.11
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