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The F48MR12W2M1HB70BPSA1 is a CoolSiC™ MOSFET half-bridge module in the EasyPACK™ package. It features a 1200 V drain-source voltage and a continuous DC drain current of 100 A at 175 °C junction temperature, with a repetitive peak current rating of 200 A. The on-state resistance is typically 8.1 mΩ at 25 °C. The module utilizes PressFIT contact technology and includes an integrated NTC thermistor for thermal monitoring. It employs an AlN substrate to achieve low thermal resistance.
Verify the specific ordering suffix B70 against official Infineon documentation to confirm exact manufacturing lot codes and compliance status. Ensure that gate driver selection aligns with the recommended operating voltages specified in the datasheet. Confirm mechanical mounting force requirements match the application constraints before procurement.
Select this component for high-density power conversion designs requiring low switching losses. Evaluate the thermal management strategy based on the provided RthJH value. Verify that the system's maximum operating temperature remains within the -40 °C to +175 °C range. Consider the stray inductance value when designing PCB layouts for optimal performance.
This part belongs to the Infineon CoolSiC™ M1H series, utilizing Trench MOSFET technology. It is designed as a direct replacement or upgrade for silicon-based modules in high-efficiency applications. The EasyPACK™ form factor ensures compatibility with standard mounting solutions used in industrial power electronics.
Consult the official cross-reference list for verified substitutes. Ensure any alternative maintains equivalent voltage ratings, current capabilities, and thermal characteristics.