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The FA1A4M-D-T1-A is an NPN silicon small-signal bipolar junction transistor manufactured by Renesas Electronics Corporation. It is housed in a Mini Mold package-3 (SOT-563) surface-mount case. The device features a collector current rating of 100mA and a collector-emitter voltage of 50V. It is supplied in tape and reel packaging for automated assembly processes.
Verify the specific ordering suffix against the official Renesas datasheet to ensure correct packaging and variant selection. Confirm that the Mini Mold package-3 footprint matches your PCB layout constraints. Check for any product change notices or obsolescence declarations prior to finalizing procurement orders.
Select this component when a low-current NPN switch with integrated biasing is required in a minimal footprint. Ensure the 50V voltage rating and 100mA current limit align with the target circuit's operational parameters. Validate thermal dissipation capabilities within the specified Mini Mold package constraints.
This part belongs to the FA1A4M series of small-signal transistors from Renesas. It represents a standard discrete semiconductor solution for basic amplification and switching tasks. The device complements larger power transistors by providing efficient control in low-power signal paths.
Consult official cross-reference lists for direct substitutes. Verify pin compatibility and electrical specifications before substituting with generic equivalents.