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The FA4F4M-T1B-A is a single NPN pre-biased bipolar junction transistor (BJT) manufactured by Renesas Electronics Corporation. It integrates internal base and emitter-base resistors to simplify circuit design. The device features a collector-emitter breakdown voltage of 50 V and a maximum continuous collector current of 100 mA. Power dissipation is rated at 200 mW. The component operates within a temperature range of -40°C to +85°C. It utilizes a compact surface-mount package with three leads, designed for efficient PCB layout in low-power applications.
Verify the obsolete status through official Renesas channels before finalizing designs. Confirm that the integrated resistor values meet specific circuit requirements. Ensure compatibility with existing thermal management strategies given the 200 mW power rating. Check for available alternative components if long-term supply continuity is required.
Select this component when space constraints necessitate integrated biasing resistors. Consider the 50 V breakdown voltage for low-voltage logic interfaces. Evaluate the 100 mA current limit against load requirements. Assess thermal performance within the specified operating temperature range to ensure reliability under varying environmental conditions.
This part belongs to Renesas' portfolio of discrete pre-biased transistors. These devices combine NPN or PNP transistors with built-in resistors to reduce board space and assembly complexity. The FA4F4M-T1B-A specifically targets applications requiring simple, cost-effective switching solutions with minimal external component count.
Public confirmed substitute part numbers are not provided in the source data. Consult official cross-reference documentation for equivalent components.