FA4L4L-T1B-A

Overview

The FA4L4L-T1B-A is a single NPN pre-biased bipolar junction transistor (BJT) manufactured by Renesas. It features an integrated base resistor to simplify circuit design and reduce component count. The device is rated for a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA, with a power dissipation capacity of 200 mW. The typical collector cutoff current is 100 mA. It is housed in the MM (SC-59) surface-mount package, which measures 3 mm in length and contains three leads. The component is lead-compliant.

Feature Summary

• Integrates a built-in base resistor to minimize mounting area and external component requirements
• Designed as a single NPN pre-biased transistor for simplified switching applications
• Utilizes a compact SC-59 surface-mount package for efficient board space utilization

Applications

• General-purpose switching circuits requiring pre-biased logic interfaces
• Driver stages for low-power actuators and sensors
• Signal level shifting and buffering in embedded systems

Procurement Notes

Verify RoHS compliance status carefully, as some sources indicate non-compliance while others suggest lead compliance. Confirm the specific manufacturing lot date code and packaging type (bulk vs. tape/reel) with the supplier prior to order placement. Ensure the MM package variant matches the footprint requirements of the target PCB design. Cross-reference the datasheet revision to confirm electrical characteristics align with the intended application parameters.

Selection Notes

Select this component when a compact NPN switching solution with integrated biasing is required. The 50 V rating and 100 mA current limit suit low-to-medium power digital switching tasks. The SC-59 package is appropriate for high-density surface-mount designs. Consider the internal resistor value if precise base drive current calculation is critical for the specific load conditions.

Part Context

This part belongs to Renesas' family of built-in resistor bipolar transistors. These devices combine a BJT with an internal resistor to replace discrete transistor-resistor combinations. The FA4L4L series specifically targets applications where board space reduction and assembly simplicity are prioritized over high-power handling capabilities.

Replacement Considerations

Direct substitutes must match the NPN configuration, 50 V/100 mA ratings, and SC-59 (MM) package. Verify that any alternative pre-biased transistor offers comparable internal resistance values to ensure consistent switching behavior.