FAM65CR51AXZ1

Overview

The FAM65CR51AXZ1 is a Silicon Carbide (SiC) MOSFET module from the EliteSiC APM16 series, designed for high-efficiency power conversion. It integrates an N-channel SiC MOSFET and a SiC diode in a half-bridge topology within an APM16-CDB package. Key electrical parameters include a breakdown voltage of 650 V, a maximum on-resistance of 51 mΩ, and a forward voltage of 1.6 V. The device operates with a gate-source voltage range of -10 V to +10 V and supports temperatures from -40°C to +125°C.

Feature Summary

• Integrates a 650V SiC MOSFET and SiC diode for reduced switching losses
• Optimized for multiphase and semi-bridgeless Power Factor Correction (PFC)
• Utilizes APM16-CDB L-forming package for efficient thermal management

Applications

• Multiphase Boost Converter Stages
• Semi-Bridgeless PFC Topologies
• High-Efficiency AC/DC Power Supplies

Procurement Notes

Verify the specific suffix 'AXZ1' against the manufacturer's current datasheet to confirm pinout and thermal pad configuration. Ensure compatibility with existing PCB footprints for the APM16-CDB package. Confirm RoHS compliance status through official documentation before integration into regulated equipment designs.

Selection Notes

Select this component for applications requiring low conduction losses at high frequencies. The 51 mΩ Rds(on) offers a balance between cost and performance for 650V systems. Consider the integrated SiC diode for improved reverse recovery characteristics compared to standard silicon alternatives in hard-switching environments.

Part Context

This part belongs to the EliteSiC APM16 family, which provides pre-configured power stages for automotive and industrial applications. It complements other variants like FAM65CR51ADZ1 by offering specific packaging or testing configurations within the same functional half-bridge architecture.

Replacement Considerations

The FAM65CR51ADZ1 is a documented similar variant within the same series. Verify if the ADZ1 suffix denotes a different package orientation or qualification level before substitution.