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The FAM65CR51DZ2 is a silicon carbide (SiC) MOSFET module from onsemi's EliteSiC family, designed for high-efficiency power conversion. It integrates a half-bridge topology with an Al2O3 DBC substrate and features a 650V breakdown voltage. The device incorporates a SiC diode with a forward voltage of 1.6V and offers a low on-resistance of 51mΩ. Rated for through-hole mounting, it operates within a temperature range of -40°C to +125°C, supporting robust performance in demanding industrial applications.
Verify the specific suffix 'DZ2' against official datasheets to confirm package and pinout compatibility. Confirm RoHS compliance status and check for recent Product Change Notifications (PCN). Ensure ordering quantities align with factory packaging specifications to avoid partial reel issues.
Select this component when designing systems requiring low conduction losses and high thermal stability. The 51mΩ resistance suits moderate current applications, while the 650V rating provides adequate headroom for standard bus voltages. Evaluate gate drive requirements against the specified +/- 10V limits.
This module belongs to the EliteSiC series, which focuses on combining silicon carbide technology with advanced packaging. It targets applications where traditional silicon devices face limitations in switching speed or thermal dissipation, offering a compact solution for modern power electronics.
Consult official substitution guides for equivalent modules within the same voltage and current ratings. Verify that alternative parts support the required L-forming PFC application and match the physical footprint constraints.