SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FBS-GAM02-P-C50 is a multifunction power module featuring two integrated eGaN® HEMT switches rated for 100 VDC and 10 A continuous current. It includes dual high-speed gate drivers, internal shoot-through protection logic, and a +5 VDC bias monitoring circuit. The device supports four configurations: single low-side, single high-side, independent switches, or half-bridge with input protection. Packaged in an 18-pin SMT molded epoxy format, it enables switching frequencies exceeding 1.0 MHz.
Verify the specific part number against official EPC Space documentation to ensure correct configuration and commercial rating. Confirm that the application environment remains within the specified operating temperature range of -40°C to +85°C. Ensure proper logic level interfacing, as inputs are limited to 5.0 VDC maximum. Validate thermal management requirements based on the junction-to-case resistance values provided in the datasheet.
Select this module when a compact solution combining power switching and gate driving is required. It is suitable for applications needing flexible topology support, such as half-bridge converters or independent motor drives. Consider its high-speed switching capability for efficient power conversion. Ensure the design accommodates the 18-pin SMT footprint and utilizes appropriate bootstrap capacitance for high-side driver operation.
This component serves as the non-flight development vehicle for the FBS-GAM02-P-R50 commercial space device. It is classified as a commerce-rated EAR-99 device. The module incorporates technology derived from space-grade designs, offering rugged performance in a standard industrial package. It represents a bridge between specialized aerospace components and broader commercial power electronics applications.
No public confirmed substitute part numbers are available.