FBS-GAM02P-C-PSE

Overview

The FBS-GAM02P-C-PSE is a high-speed multifunction power gate driver development module from EPC Space, LLC. It incorporates eGaN HEMTs using GaN-Driving-GaN technology and features two independent high-speed gate drive circuits with an internal 100 V-rated bootstrap diode. The device supports four configurations: single low-side, single high-side, independent drivers, or half-bridge with shoot-through protection. It operates at switching frequencies exceeding 1.0 MHz and includes internal power good circuitry. Designed for commercial screening, it drives external eGaN switching elements rated up to 100 V in a compact 18-pin SMT package.

Feature Summary

• Integrates two independent high-speed gate drive circuits utilizing eGaN HEMT technology
• Supports multiple operational modes including half-bridge configuration with input shoot-through prevention logic
• Includes internal power good monitoring circuitry for bias voltage supervision
• Features rugged compact molded SMT package with pillar I/O pads

Applications

• Development platform for the FBS-GAM02P-R-PSE flight unit version
• Power switches and actuators
• Single and multi-phase motor phase drivers
• High speed DC-DC conversion

Procurement Notes

Verify that the specific part number corresponds to the commercial screened variant intended for engineering board development. Confirm compatibility with external EPC Space eGaN HEMT power switch transistors rated up to 100 V. Ensure application circuits adhere to recommended power sequencing where VBIAS is applied before VDD to prevent non-deterministic states. Validate that layout practices minimize radiated EMI due to high dV/dt signals on gate output pins.

Selection Notes

Select this component when a versatile gate driver capable of driving external eGaN HEMTs is required for prototyping. It is suitable for applications needing configurable low-side, high-side, or half-bridge topologies. The inclusion of shoot-through protection and power good monitoring simplifies control logic design. Ensure the operating environment remains within the specified temperature range and that the external load capacitance falls within the supported dynamic characteristics.

Part Context

This module serves as the commercial development counterpart to the space-grade FBS-GAM02P-R-PSE. It utilizes the same underlying GaN-Driving-GaN patented technology but is screened for commercial reliability rather than radiation-hardened space environments. It provides a functional equivalent for testing and validation prior to migrating designs to the flight-ready version.

Replacement Considerations

The datasheet identifies the FBS-GAM02P-R-PSE as the direct flight unit version developed from this module. No other substitute part numbers are documented.