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FC06004Y is listed in the Single Diodes range at ChipApex. The manufacturer field lists fastSiC. Its product description is DIODE SIL CARB 650V 4A DO221AC. Review the specifications below when checking this part for your BOM.
The FC06004Y is a silicon carbide merged PN-Schottky diode from the Cheetah Series, rated for 650 V DC blocking voltage. It features a nominal forward current of 4 A and a maximum continuous forward current of 4.3 A at Tc ≤25°C. The device exhibits a total capacitive charge (QC) of 6.2 nC and capacitance stored energy (EC) of 0.92 μJ at VR=400V. Operating junction temperature ranges from -55°C to 150°C. Key electrical parameters include a typical forward voltage of 1.41 V at IF=4A and Tj=25°C, with a reverse current of 0.5 μA at VR=520V.
Verify the specific package marking against the datasheet table. The FC06004Y corresponds to the SMAF package with marking C64. Confirm that the component meets RoHS compliance and halogen-free requirements as stated in the product features section before finalizing procurement specifications.
Select this component for designs requiring high-speed rectification with minimal switching losses. Ensure thermal management supports the specified power dissipation limits. Consider the operating temperature range when designing for high-temperature environments. Verify compatibility with the intended circuit topology for optimal performance.
This part belongs to the Cheetah Series of 650 V SiC MPS High Speed Rectifiers manufactured by Fast SiC Semiconductor Inc. The series emphasizes system efficiency, parallel device convenience, and compact lightweight system realization through advanced silicon carbide technology.
Consult the manufacturer directly for comparable products. No specific substitute part numbers are listed in the provided documentation.
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