FCA16N60

$2.01

Description：MOSFET N-CH 600V 16A TO3PN
Series：SuperFET™
Mfr：onsemi
Package：Tube

SKU:c251abe26408 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 16A TO3PN
Series：SuperFET™
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：260mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：70 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：2250 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：167W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-3PN
Package / Case：TO-3P-3, SC-65-3

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FCA16N60

Overview

The FCA16N60 is a 600V N-Channel MOSFET from the SuperFET family, utilizing an advanced charge balance mechanism. It features a typical Rds(on) of 0.22 Ω and low gate charge (typ. Qg=55nC). The device supports continuous drain currents of 16A at 25°C case temperature and withstands extreme dv/dt rates with high avalanche energy ratings.

Feature Summary

Advanced charge balance mechanism for low on-resistance and lower gate charge performance
Tailored to minimize conduction loss and provide superior switching performance
Capable of withstanding extreme dv/dt rates and higher avalanche energy

Applications

AC/DC power conversion in switching mode operation
System miniaturization applications requiring higher efficiency
High voltage MOSFET circuits

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to counterfeiting risks. Confirm datasheet revision status and package type (TO-3P or TO-3PN) against specific design requirements before procurement.

Selection Notes

Select based on required breakdown voltage and thermal management capabilities. Consider junction-to-case thermal resistance and maximum safe operating area curves for circuit design. Ensure gate drive voltage aligns with threshold characteristics for optimal switching performance.

Part Context

Part of the SuperFET family designed for high-efficiency power conversion. Originally manufactured by Fairchild Semiconductor, now part of onsemi portfolio. Designed for robust performance in demanding switching applications.

Replacement Considerations

Check pinout compatibility and electrical specifications when substituting. Verify thermal resistance and package dimensions match existing board layout constraints.