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Product Detailed Parameters
- Description：MOSFET N-CH 600V 20A TO3PN
- Series：SuperFET™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：98 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：3080 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：208W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3PN
- Package / Case：TO-3P-3, SC-65-3
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Overview
The onsemi FCA20N60FS is a single N-channel Power MOSFET belonging to the SuperFET family, designed for high-voltage switching applications. It features a 600V drain-source breakdown voltage and supports a continuous drain current of 20A. The device exhibits a maximum on-resistance of 190mΩ at room temperature. Packaged in a TO-3PN (TO-220AB) format with an active lead, it offers a power dissipation rating of 208W. Key switching parameters include a typical turn-on delay time of 62ns, fall time of 65ns, and reverse recovery charge characteristics suitable for efficient power conversion topologies.
Feature Summary
- SuperFET technology integration providing optimized switching performance and low gate charge
- High avalanche energy capability ensuring robustness against transient overvoltage events
- Zener-protected gate structure simplifying driver design and preventing gate oxide damage
Applications
- High-frequency switch-mode power supplies
- DC-DC converter circuits
- Motor control systems
Procurement Notes
Verify the specific suffix 'FS' against official manufacturer documentation to confirm tape-and-reel packaging or specific marking variations. Confirm RoHS compliance status and ensure the component matches the exact pinout configuration required by the target PCB footprint. Cross-reference datasheet revisions to validate thermal resistance values.
Selection Notes
Select this component when a balance between low conduction losses and fast switching speeds is required in high-voltage environments. The 600V rating provides adequate headroom for standard industrial AC line voltages. Evaluate thermal management requirements based on the 20A continuous current limit and the specific ambient operating conditions of the final assembly.
Part Context
This part belongs to the onsemi SuperFET series, which combines advanced trench gate technology with optimized body diode characteristics. The FCA20N60 variant specifically targets applications demanding reduced switching losses compared to standard planar MOSFETs while maintaining high reliability in harsh electrical environments.
Replacement Considerations
Direct substitutes may include other 600V, 20A N-channel MOSFETs in TO-3PN packages from manufacturers such as STMicroelectronics or Infineon, provided pin compatibility and electrical parameters align with the original design specifications.
