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The FCA76N60N is a SupreMOS N-channel power MOSFET manufactured by onsemi, housed in a TO-3PN (TO-3P) through-hole package. It features a drain-source breakdown voltage of 600 V and supports a continuous drain current of 76 A. The device exhibits a maximum on-resistance of 28 mΩ at 10 V gate drive. Key electrical parameters include a gate charge of 285 nC, a threshold voltage of 2 V, and a maximum power dissipation of 543 W. It operates within a temperature range of -55°C to +150°C junction temperature.
Verify component authenticity and datasheet revisions before integration. Confirm that the specific lot matches the required electrical characteristics. Check for obsolescence status as distribution availability may be limited. Ensure proper handling procedures are followed due to the through-hole mounting style and high-power rating.
Select this component when a 600V N-channel MOSFET with high current capability is required. The 28 mΩ on-resistance offers efficiency benefits over higher resistance alternatives. Consider the TO-3PN package for compatibility with existing heatsink infrastructure. Evaluate thermal requirements against the 543 W dissipation limit.
This part belongs to the SupreMOS family from onsemi, designed for high-voltage power switching. It complements other devices in the series like the FCA47N60NF, offering higher current capacity in a similar voltage class. The TO-3PN form factor distinguishes it from surface-mount options like the DPAK packages found in lower-current variants.
Direct substitutes should match the 600V rating, 76A current, and TO-3PN package. Verify pinout compatibility and thermal resistance specifications. Cross-reference with onsemi's official replacement guides for obsolete parts.