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The FCB070N65S3 is a SuperFET 3 single N-channel power MOSFET manufactured by onsemi. It features a 650V breakdown voltage and a maximum drain-source on-resistance of 70mΩ at VGS=10V. The device utilizes silicon technology and is housed in a TO-247 package. Key electrical characteristics include a continuous drain current of 89A, a gate threshold voltage range of 2V to 4V, and a total gate charge of 75nC at VGS=10V. Additional parameters include an input capacitance of 2370pF and a reverse transfer capacitance of 36pF.
Verify the specific ordering suffix and package variant against the official datasheet before procurement. Confirm compliance requirements such as RoHS status and halogen-free specifications. Ensure the supplier provides valid traceability documentation. Check for any recent product change notifications that may affect pinout or electrical characteristics. Validate that the component matches the exact part number designation required for the design.
Select this component based on its 650V rating and 70mΩ on-resistance balance. Consider the 89A continuous current capability for load requirements. Evaluate the thermal performance within the TO-247 package for the specific application environment. Compare gate charge values against driver capabilities to ensure efficient switching. Verify compatibility with system voltage levels and switching frequency constraints.
This component belongs to the SuperFET 3 family from onsemi, which combines a trench MOSFET with a synchronous rectifier diode. This integration reduces conduction losses and simplifies circuit design by eliminating the need for external body diodes. The series targets applications requiring high efficiency and reliability in power conversion systems.
Consult the manufacturer's cross-reference guide for verified substitutes. Ensure any replacement maintains equivalent voltage, current, and resistance ratings. Verify package compatibility and pinout alignment. Review thermal and electrical specifications to confirm functional equivalence.