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Product Detailed Parameters
- Description：MOSFET N-CH 600V 11A D2PAK
- Series：SuperFET™
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：380mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：52 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1490 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The FCB11N60TM is a SuperFET N-channel MOSFET from onsemi, utilizing charge balance technology for low on-resistance and gate charge. It features a 600V drain-source voltage (VDSS) and a continuous drain current (ID) of 11A at 25°C case temperature. The typical on-resistance (RDS(on)) is 320mΩ at VGS=10V. The device supports a pulse drain current (IDM) of 33A and has a maximum gate-source voltage (VGSS) of ±30V. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- SuperFET technology employs charge balance mechanisms to minimize conduction loss and enhance switching performance.
- Capable of withstanding extreme dv/dt rates and higher avalanche energy levels.
- Designed for system miniaturization and higher efficiency in AC/DC power conversion applications.
Applications
- Power Factor Correction (PFC)
- Server and Telecommunications Power Supplies
- Flat Panel Television Power Supplies
- ATX Power Supplies
- Industrial Power Supplies
Procurement Notes
Verify the specific suffix 'TM' against the official datasheet to confirm package type and tape-and-reel specifications. Ensure compatibility with RoHS standards if required by your manufacturing process. Cross-reference the manufacturer part number with distributor listings to confirm availability and lead times. Check for any recent Product Change Notifications (PCN) regarding assembly or material composition updates.
Selection Notes
Select this component for high-voltage switching applications requiring low conduction losses. The SuperFET architecture offers superior performance compared to standard MOSFETs in terms of gate charge and output capacitance. Consider the thermal management requirements given the 11A continuous current rating and TO-220AB package. Evaluate the avalanche energy ratings for robustness in inductive load switching scenarios.
Part Context
The FCB11N60TM belongs to the SuperFET family, representing an advancement in high-voltage MOSFET technology. Originally developed by Fairchild Semiconductor, this product line was integrated into onsemi following their acquisition. The SuperFET series utilizes proprietary charge balance techniques to achieve lower on-resistance and gate charge, targeting efficiency improvements in power supply designs.
Replacement Considerations
Direct replacements include FCB11N60 and FCB11N60F. Verify pinout and thermal characteristics when substituting. Other SuperFET variants may offer different current ratings but maintain similar electrical characteristics.
