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Product Detailed Parameters
- Description：MOSFET N-CH 650V 14A D2PAK
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：199mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1.4mA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1225 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：98W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The FCB199N65S3 is a single N-channel enhancement mode MOSFET from the SuperFET III series, manufactured by onsemi. It utilizes silicon technology and features a D2PAK-3 (TO-263-3) surface-mount package. Key electrical parameters include a drain-source breakdown voltage of 650 V, a continuous drain current of 14 A, and a maximum gate-source voltage of ±30 V. The device exhibits a typical on-resistance of 170 mΩ at 25°C and a gate charge of 30 nC. It operates within a temperature range of -55°C to +150°C with a power dissipation rating of 98 W.
Feature Summary
- Integrates SuperFET III charge-balanced superjunction technology for optimized low on-resistance and fast switching performance.
- Features enhanced avalanche ruggedness through 100% avalanche testing to withstand high-energy transients.
- Designed with low effective output capacitance to minimize switching losses and improve overall circuit efficiency.
Applications
- Telecommunications and server power supply systems
- Industrial power conversion equipment
- Uninterruptible Power Supply (UPS) units
- Solar energy inverter applications
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with onsemi or authorized distributors before integration. Confirm that the D2PAK-3 footprint matches the target PCB design. Ensure thermal management solutions align with the 98 W power dissipation rating under expected operating conditions. Cross-reference the part number against any recent obsolescence notices or alternate package options.
Selection Notes
Select this component when designing circuits requiring high-voltage handling with moderate current capacity. The 170 mΩ on-resistance offers a balance between conduction loss and cost for medium-power applications. Consider the 14 A current rating relative to thermal constraints and ambient temperatures. The SuperFET III architecture is suitable for designs prioritizing reduced electromagnetic interference due to controlled switching characteristics.
Part Context
This device belongs to the SuperFET III family, which employs charge-balanced superjunction technology. This architecture allows for lower specific on-resistance compared to conventional planar MOSFETs. The series is engineered to provide superior switching performance while maintaining robust reliability standards for industrial and commercial power electronics.
Replacement Considerations
Direct substitutes within the same series include FCH029N65S3 and NTB190N65S3HF. Verify pinout compatibility and thermal resistance values when considering these alternatives. Ensure that any replacement maintains the required 650 V blocking voltage and meets the specific current and resistance specifications of the original design.
