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Product Detailed Parameters
- Description：MOSFET N-CH 800V 2.6A DPAK
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.25Ohm @ 1.3A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 260µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：585 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：39W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The FCD2250N80Z is an N-Channel Power MOSFET from onsemi's SuperFET II family, utilizing super-junction charge balance technology. It features a drain-source voltage (Vds) of 800 V and a continuous drain current (Id) of 2.6 A. The device has a maximum on-resistance (Rds(on)) of 2.25 ohms at Vgs = 10 V. It operates within a temperature range of -55°C to +150°C junction temperature. The component is housed in a TO-252 (DPAK) surface-mount package with three leads.
Feature Summary
- Super-junction charge balance technology for optimized performance
- High voltage capability suitable for demanding power applications
- Surface-mount DPAK package for efficient PCB integration
Applications
- High-voltage switching circuits
- Power supply designs requiring robust N-channel control
- Industrial motor drive systems
Procurement Notes
Verify the specific suffix 'Z' indicates lead-free compliance and RoHS status as per manufacturer documentation. Confirm the package type is TO-252AA (DPAK) and matches your board footprint requirements. Ensure thermal management strategies align with the 2.6 A continuous current rating and 2.25 ohm on-resistance characteristics under your operating conditions.
Selection Notes
Select this component when an 800 V breakdown voltage is required alongside moderate current handling capabilities. The SuperFET II architecture offers advantages in high-voltage efficiency compared to traditional planar technologies. Consider the TO-252 package constraints for thermal dissipation and ensure gate drive voltages remain within the specified limits for optimal Rds(on) performance.
Part Context
This part belongs to onsemi's SuperFET II series, which employs super-junction MOSFET technology. This family is designed to provide superior figure-of-merit metrics for high-voltage applications. The FCD2250N80Z specifically targets markets needing reliable, high-voltage switching elements in compact surface-mount formats.
Replacement Considerations
Direct substitutes may include other 800 V N-Channel MOSFETs in TO-252 packages with similar current ratings. Verify pinout compatibility and thermal resistance values before substitution. Cross-reference with onsemi's official replacement guides or equivalent parts from other manufacturers ensuring identical electrical specifications.
