ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 600V 3.9A DPAK
- Series：SuperFET™
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：3.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.2Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16.6 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：540 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：50W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Download product information
Overview
The FCD4N60TM_WS is a single N-channel enhancement mode MOSFET from onsemi's SuperFET series, utilizing silicon technology. It features a 600 V drain-source breakdown voltage and a continuous drain current of 3.9 A. The device offers a maximum drain-source on-resistance of 1 Ohm at room temperature. Gate specifications include a threshold voltage of 3 V and a total gate charge of 16.6 nC. Electrical performance includes a rise time of 45 ns and a fall time of 30 ns. The component operates within a junction temperature range of -55 °C to +150 °C with a power dissipation rating of 50 W.
Feature Summary
- Integrates SuperFET charge balance technology for optimized high-voltage switching efficiency.
- Provides enhanced thermal stability suitable for demanding power conversion environments.
- Features low gate charge characteristics to facilitate efficient driver interface.
Applications
- High-voltage DC-DC converter circuits
- Industrial motor drive systems
- Uninterruptible power supply (UPS) topologies
Procurement Notes
Verify the specific suffix designation against official manufacturer documentation to confirm exact electrical tolerances and packaging configuration. Ensure compliance with RoHS directives and REACH regulations by reviewing the Material Composition Declaration. Confirm that the DPAK (TO-252-3) package dimensions align with the target PCB footprint requirements prior to final procurement decisions.
Selection Notes
Select this component when designing circuits requiring robust 600 V blocking capability with moderate current handling. The 1 Ohm on-resistance balances conduction losses against switching performance. Consider the 3.9 A continuous current limit and 50 W power dissipation capacity relative to the available thermal management solution. The SuperFET architecture is appropriate for applications prioritizing reduced gate drive complexity in high-voltage scenarios.
Part Context
This part belongs to the FCD4N60 family of super-junction MOSFETs manufactured by onsemi. These devices are engineered for high-efficiency power processing using advanced silicon planar technology. The SuperFET series specifically targets applications where high voltage isolation and low switching losses are critical design constraints.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical voltage ratings, current capabilities, and package compatibility.
