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Product Detailed Parameters
- Description：MOSFET N-CH 600V 7A DPAK
- Series：SuperFET™
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：920 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：83W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The FCD7N60TM is a single N-channel enhancement mode power MOSFET manufactured by onsemi, belonging to the SuperFET series. It utilizes silicon technology and is housed in a DPAK-3 (TO-252-3) surface-mount package with three pins. Key electrical parameters include a drain-source breakdown voltage (Vds) of 600 V and a continuous drain current (Id) of 7 A. The device features a maximum on-resistance (Rds On) of 530 mOhms at a gate-source voltage of 10 V. Additional specifications include a gate threshold voltage of 3 V, a total gate charge of 30 nC, and a power dissipation rating of 83 W. The component operates within a temperature range of -55 °C to +150 °C junction temperature.
Feature Summary
- Incorporates SuperFET technology for optimized high-voltage performance and switching characteristics.
- Features an N-channel enhancement mode configuration designed for efficient power control applications.
- Utilizes a DPAK-3 (TO-252-3) surface-mount package to facilitate automated assembly and thermal management.
Applications
- High-frequency power conversion circuits
- DC-DC converter topologies
- Synchronous rectification stages
Procurement Notes
Verify the specific ordering suffix and packaging format against official onsemi documentation prior to procurement. Confirm that the requested variant matches the required tape and reel or cut tape specifications. Ensure compliance with RoHS and REACH directives as stated in the manufacturer's declaration. Cross-reference the part number with the latest datasheet revision to confirm active status and any potential design changes.
Selection Notes
Select this component when a 600 V rated N-channel MOSFET with moderate current handling is required in a compact surface-mount form factor. Evaluate the 530 mOhm on-resistance against system conduction loss requirements. Consider the 30 nC gate charge for driver capability and switching speed optimization. Ensure the thermal design accommodates the 83 W power dissipation limit under intended operating conditions.
Part Context
This part belongs to the FCD7N60 family of SuperFET power MOSFETs from onsemi. These devices are engineered for general-purpose high-voltage switching applications. The SuperFET series typically offers improved figure-of-merit compared to standard trench technologies. The DPAK package provides a balance between electrical performance and PCB space efficiency for industrial and consumer power supplies.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative components by matching critical parameters such as Vds, Id, Rds On, package type, and pinout configuration against official cross-reference data.
