FCD900N60Z

$0.81

Description：POWER FIELD-EFFECT TRANSISTOR, 4
Series：SuperFET® II
Mfr：Fairchild Semiconductor
Package：Bulk

SKU:3fd5b5b11e11 Category: Single FETs, MOSFETs Brand: Fairchild Semiconductor

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Product introduction

Product Detailed Parameters

Description：POWER FIELD-EFFECT TRANSISTOR, 4
Series：SuperFET® II
Mfr：Fairchild Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：900mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：720 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：52W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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FCD900N60Z

Overview

The FCD900N60Z is an N-channel Power MOSFET manufactured by Fairchild Semiconductor, designed for high-voltage switching applications. It features a 600V drain-source voltage rating and supports continuous drain currents up to 4.5A at case temperature. The device exhibits a maximum on-resistance of 900 milliohms when driven at 10V gate-source voltage. Packaged in the TO-220F-3 format, it offers robust thermal performance with a power dissipation capacity of 33W under case conditions. The component operates within a junction temperature range of -55°C to 150°C.

Feature Summary

High-voltage capability optimized for reliable operation in demanding power environments
Low on-resistance design minimizes conduction losses during active switching states
Robust thermal management structure supports sustained current handling capabilities

Applications

High-frequency switch-mode power supplies
Industrial motor control circuits
General-purpose power switching systems

Procurement Notes

Verify the manufacturer designation carefully, as the model number appears associated with multiple vendors including onsemi in public records. Confirm the specific datasheet version matches the physical marking on the component body. Ensure the package type corresponds exactly to the required PCB footprint before finalizing procurement orders to avoid integration errors.

Selection Notes

Select this component when a 600V blocking voltage is required alongside moderate current handling needs. The TO-220F-3 package facilitates efficient heat dissipation for through-hole mounting strategies. Evaluate the gate charge specifications against driver capabilities to ensure optimal switching speed and efficiency in the target circuit topology.

Part Context

This device belongs to the family of high-voltage N-channel MOSFETs intended for power conversion tasks. It utilizes advanced silicon planar technology to achieve low on-state resistance while maintaining high breakdown voltage characteristics. The component serves as a fundamental building block for efficient energy transfer in various electronic power systems.