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Product Detailed Parameters
- Description：MOSFET N-CH 600V 76A TO247-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：41mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：360 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：14365 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：595W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH041N60F is a SuperFET II series N-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 600 V and a continuous drain current of 76 A at 25°C case temperature. The device utilizes TO-247 through-hole packaging with three pins. Key electrical parameters include a maximum drain-source on-resistance of 41 mΩ and a typical gate charge of 277 nC at Vgs=10V. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- SuperFET II technology providing low conduction losses and optimized switching performance
- High avalanche energy capability for improved system reliability under stress conditions
- Optimized body diode reverse recovery characteristics suitable for hard and soft-switching topologies
Applications
- High-voltage full-bridge and half-bridge DC-DC converters
- Interleaved boost Power Factor Correction (PFC) circuits
- Hybrid Electric Vehicle (HEV) and Electric Vehicle (EV) boost PFC applications
Procurement Notes
Verify the specific suffix designation, as variants such as FCH041N60F-F085 may carry distinct automotive certifications or status updates. Confirm RoHS compliance and lead times directly with authorized distributors. Ensure the selected package matches the thermal requirements of the target application design.
Selection Notes
Select this component for high-efficiency power conversion designs requiring robust 600V blocking capabilities. The low Rds(on) minimizes thermal generation in high-current scenarios. Evaluate the thermal resistance characteristics against the expected ambient operating conditions to ensure stable performance without excessive heatsinking requirements.
Part Context
This device belongs to the SuperFET II family, which employs charge balance technology to achieve superior performance metrics compared to standard planar structures. The series is engineered for high-voltage applications where efficiency and switching speed are critical constraints. It represents an evolution in silicon carbide-free high-voltage MOSFET solutions.
Replacement Considerations
Direct substitutes within the same voltage and current ratings should be evaluated based on pin compatibility and thermal resistance. Verify that alternative components meet the specific Rds(on) and Qg requirements to maintain circuit efficiency.
