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Product Detailed Parameters
- Description：MOSFET N-CH 650V 76A TO247-4
- Series：FRFET®, SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：41mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id：5V @ 7.6mA
- Gate Charge (Qg) (Max) @ Vgs：298 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：12560 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：595W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-4
- Package / Case：TO-247-4
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Overview
The FCH041N65EFLN4 is a high-voltage N-channel enhancement-mode MOSFET from onsemi's SUPERFET II family, utilizing superjunction technology. It features a 650 V drain-source voltage rating and a maximum continuous drain current of 76 A at 25°C case temperature. The device exhibits a typical on-resistance of 41 mΩ at VGS = 10 V. Key electrical parameters include a gate charge of 229 nC, a threshold voltage of 3 V, and a power dissipation capacity of 595 W. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Superjunction architecture for low conduction and switching losses
- Optimized body diode reverse recovery characteristics
- High avalanche energy capability for robust operation
- AEC-Q101 qualified for automotive applications
Applications
- High-voltage full-bridge and half-bridge DC-DC converters
- Interleaved boost Power Factor Correction (PFC) circuits
- Hybrid Electric Vehicle (HEV) and Electric Vehicle (EV) boost PFC systems
Procurement Notes
Verify the specific suffix against official datasheets to confirm package type and pinout configuration. Ensure compatibility with thermal management requirements given the 595 W dissipation rating. Confirm automotive qualification status if required for the target application environment.
Selection Notes
Select this component for designs requiring high efficiency in hard and soft-switching topologies. The low RDS(on) and Qg values support reduced thermal stress and improved system performance. Evaluate thermal resistance limits to ensure reliable operation under maximum load conditions.
Part Context
This part belongs to the SUPERFET II series, representing onsemi's high-voltage superjunction MOSFET lineup. It integrates charge balance technology to achieve superior performance metrics compared to conventional planar devices, targeting demanding power conversion applications.
Replacement Considerations
Direct substitutes are not explicitly confirmed in public documentation. Verify pinout compatibility and electrical ratings before considering alternative manufacturers or series.
