FCH043N60

FCH043N60

$9.05
  • Description:POWER FIELD-EFFECT TRANSISTOR, 7
  • Series:SuperFET® II
  • Mfr:Fairchild Semiconductor
  • Package:Bulk

SKU:c32c4fdfe135 Category: Brand:

  
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Product Detailed Parameters

  • Description:POWER FIELD-EFFECT TRANSISTOR, 7
  • Series:SuperFET® II
  • Mfr:Fairchild Semiconductor
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:43mOhm @ 38A, 10V
  • Vgs(th) (Max) @ Id:3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:215 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:12225 pF @ 400 V
  • FET Feature:-
  • Power Dissipation (Max):592W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247-3
  • Package / Case:TO-247-3

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FCH043N60

Overview

The FCH043N60 is an N-Channel SuperFET II MOSFET manufactured by Fairchild Semiconductor. It features a drain-source voltage of 600V and a continuous drain current of 43A at 25°C case temperature. The device exhibits a maximum on-resistance of 100mΩ at 10V gate drive. It utilizes TO-247 packaging for thermal management.

Feature Summary

  • SuperFET II technology integration
  • High voltage blocking capability
  • Low conduction losses

Applications

  • Motor control systems
  • General purpose inverters
  • Switched mode power supplies

Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor, noting its acquisition by ON Semiconductor. Confirm the specific package type matches system requirements. Ensure component authenticity through authorized distribution channels to avoid counterfeit risks in high-power applications.

Selection Notes

Select this component for designs requiring robust 600V blocking with moderate current handling. Evaluate thermal dissipation needs against the specified package capabilities. Compare on-resistance values with alternative devices to optimize efficiency in switching applications.

Part Context

This part belongs to the SuperFET II series, combining MOSFET and diode technologies. It targets high-efficiency power conversion. The series emphasizes reduced switching losses and improved thermal performance compared to standard discrete solutions.

Replacement Considerations

Check for direct equivalents within the FCH or FCP series from the same manufacturer family. Verify pinout compatibility and electrical parameter overlaps before substitution.

FCH043N60FCH043N60
$9.05
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