FCH072N60F

$6.57

Description：MOSFET N-CH 600V 52A TO247-3
Series：FRFET®, SuperFET® II
Mfr：onsemi
Package：Tube

SKU:c0ed566b05ed Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 52A TO247-3
Series：FRFET®, SuperFET® II
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：72mOhm @ 26A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：215 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：8660 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：481W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

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FCH072N60F

Overview

The FCH072N60F is a single N-channel power MOSFET manufactured by onsemi, designed for high-voltage switching applications. It features a 600V drain-source voltage rating and supports a continuous drain current of 52A at case temperature. The device exhibits a maximum on-resistance of 72mΩ when driven at 10V gate-source voltage. Packaged in a TO-247-3 through-hole configuration, it provides robust thermal performance suitable for industrial power conversion systems.

Feature Summary

High-voltage capability with 600V breakdown rating
Low on-resistance for efficient conduction
Through-hole mounting for reliable thermal dissipation

Applications

Industrial motor drives
Power supply circuits
Inverter systems

Procurement Notes

Verify the specific ordering suffix to ensure compatibility with required packaging or environmental standards. Confirm that the component meets RoHS directives if applicable to your manufacturing process. Cross-reference the manufacturer datasheet for precise thermal resistance values and absolute maximum ratings before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring high voltage isolation and moderate current handling. Ensure the gate drive circuit can provide sufficient voltage to minimize on-resistance. Evaluate thermal management requirements based on the specified power dissipation limits and ambient operating conditions.

Part Context

This part belongs to the SupreMOS family of power MOSFETs from onsemi. These devices are engineered for high reliability and efficiency in power electronics. The TO-247 package is standard for medium to high-power discrete semiconductor applications.