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Product Detailed Parameters
- Description：MOSFET N-CH 800V 46A TO247
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：85mOhm @ 23A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 4.6mA
- Gate Charge (Qg) (Max) @ Vgs：255 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：10825 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：446W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH085N80-F155 is an N-channel power MOSFET manufactured by onsemi, housed in a TO-247 flange mount package. It features a minimum drain-source breakdown voltage of 800 V and a maximum continuous drain current of 46 A. The device exhibits a maximum drain-source on-resistance of 0.085 Ω. Key electrical characteristics include a single configuration with a built-in diode, a maximum feedback capacitance (Crss) of 10 pF, and an avalanche energy rating (Eas) of 1701 mJ.
Feature Summary
- High-voltage capability with an 800 V drain-source breakdown voltage for robust operation in demanding environments.
- Integrated body diode configuration simplifies circuit design by eliminating the need for external parallel components.
- Superior avalanche energy handling rated at 1701 mJ to withstand transient stress conditions.
Applications
- Switch-mode power supplies
- Active power factor correction circuits
- Electronic ballasts
Procurement Notes
Verify the specific suffix F155 against official datasheets to confirm packaging and marking details. Ensure compatibility with thermal management requirements given the TO-247 flange mount style. Confirm RoHS compliance status through manufacturer documentation prior to integration into final assemblies.
Selection Notes
Select this component for applications requiring high voltage isolation and moderate current handling up to 46 A. The low on-resistance supports efficient power conversion. Evaluate thermal dissipation needs based on the 0.085 Ω resistance and operating environment constraints.
Part Context
This part belongs to onsemi's discrete semiconductor portfolio, specifically within the MOSFET category. It utilizes metal-oxide semiconductor technology designed for high-performance switching applications. The TO-247 package provides mechanical stability and effective heat transfer capabilities for industrial and commercial electronics.
Replacement Considerations
Cross-reference with other 800V N-channel MOSFETs in the TO-247 package from onsemi or other manufacturers. Verify pinout compatibility and ensure equivalent or superior ratings for current, voltage, and thermal performance before substitution.
