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Product Detailed Parameters
- Description：MOSFET N-CH 650V 35A TO247
- Series：FRFET®, SuperFET® II
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：110mOhm @ 17.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 3.5mA
- Gate Charge (Qg) (Max) @ Vgs：145 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4895 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：357W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH110N65F-F155 is an N-channel Power MOSFET from Fairchild Semiconductor's SuperFET II series, housed in a TO-247-3 through-hole package. It features a 650V drain-source breakdown voltage and supports a continuous drain current of 35A at case temperature. The device exhibits a maximum on-resistance of 110 milliohms at 10V gate drive. Key electrical characteristics include a maximum gate charge of 145nC and input capacitance of 4895pF. It operates within a junction temperature range of -55°C to 150°C with a power dissipation rating of 357W.
Feature Summary
- SuperFET II technology integrates body diode and MOSFET for optimized switching performance
- Ultra-low figure of merit (FOM) reduces conduction and switching losses
- Fast body diode recovery minimizes reverse recovery charge effects
- Enhanced thermal stability supports high-power density applications
Applications
- High-frequency switch-mode power supplies
- Industrial motor control systems
- Uninterruptible power supply (UPS) inverters
- DC-DC converter stages
Procurement Notes
Verify the manufacturer part number against official Fairchild or ON Semiconductor documentation to confirm authenticity. Ensure the component matches the specified TO-247-3 package and SuperFET II series designation. Check datasheet revisions for any parameter updates before integration into designs.
Selection Notes
Select this component when designing circuits requiring 650V blocking capability with low conduction losses. The 110mOhm resistance suits moderate current applications up to 35A. Consider the TO-247-3 package for efficient heat sinking in industrial environments where through-hole mounting is preferred over surface mount alternatives.
Part Context
This device belongs to the FRFET and SuperFET II product lines manufactured by Fairchild Semiconductor, now part of ON Semiconductor. The SuperFET architecture combines trench MOSFET technology with advanced packaging to deliver superior efficiency compared to standard planar devices. The FCH prefix indicates a specific manufacturing traceability code within the company's portfolio.
Replacement Considerations
Consult official cross-reference lists for verified equivalents. Potential substitutes may include other SuperFET II devices with similar voltage and current ratings from the same manufacturer family.
