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Product Detailed Parameters
- Description：MOSFET N-CH 650V 35A TO247
- Series：FRFET®, SuperFET® II
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：110mOhm @ 17.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 3.5mA
- Gate Charge (Qg) (Max) @ Vgs：145 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4895 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：357W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH110N65F-F155 is an N-channel power MOSFET from the SuperFET II series, manufactured by onsemi. It features a 650V drain-source voltage rating and a continuous drain current of 35A at case temperature. The device exhibits a maximum on-resistance of 110 milliohms at 17.5A with a 10V gate drive. Key electrical characteristics include a maximum gate charge of 145nC at 10V and an input capacitance of 4895pF at 100V. It is housed in a TO-247-3 through-hole package with a maximum power dissipation of 357W.
Feature Summary
- SuperFET II technology integrates charge balancing to minimize conduction and switching losses.
- Optimized body diode reverse recovery performance reduces system component requirements.
- Enhanced avalanche energy capability improves reliability under stress conditions.
Applications
- High-voltage full-bridge and half-bridge DC-DC converters
- Interleaved boost Power Factor Correction (PFC) circuits
- Hybrid Electric Vehicle (HEV) and Electric Vehicle (EV) boost PFC applications
Procurement Notes
Verify the manufacturer part number against official onsemi documentation to confirm the specific suffix and package type. Ensure compatibility with the intended thermal management design for the TO-247-3 package. Cross-reference specifications such as Rds(on) and Qg with the latest datasheet to validate performance requirements for the target application.
Selection Notes
Select this component for high-efficiency hard and soft-switching topologies requiring low gate charge and robust avalanche ruggedness. The SuperFET II architecture offers superior dv/dt rates compared to standard planar MOSFETs. Consider the 650V rating and 35A current capacity when designing for industrial or automotive power conversion systems.
Part Context
This device belongs to the SuperFET II family, which utilizes advanced superjunction technology. The FCH prefix indicates a Fairchild Semiconductor origin, now part of onsemi following their acquisition. The product line focuses on reducing total gate charge while maintaining low on-resistance for improved power density.
Replacement Considerations
Consult official substitution guides for equivalent SuperFET II devices with matching voltage and current ratings. Verify pinout compatibility and thermal resistance values before replacing existing designs with alternative part numbers.
