FCH170N60

$2.57

Description：MOSFET N-CH 600V 22A TO247-3
Series：SuperFET® II
Mfr：Fairchild Semiconductor
Package：Bulk

SKU:547179d12abd Category: Single FETs, MOSFETs Brand: Fairchild Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 22A TO247-3
Series：SuperFET® II
Mfr：Fairchild Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：170mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：55 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2860 pF @ 380 V
FET Feature：-
Power Dissipation (Max)：227W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

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FCH170N60

Overview

The FCH170N60 is an N-channel SuperFET II MOSFET manufactured by Fairchild Semiconductor. It features a 600V drain-source voltage rating and a continuous drain current of 22A at case temperature. The device exhibits a maximum on-resistance of 170 milliohms at 10V gate drive and 11A current. Key electrical parameters include a gate charge of 55nC, input capacitance of 2860pF, and a power dissipation capacity of 227W. It operates within a junction temperature range of -55°C to 150°C and utilizes a TO-220-3 through-hole package.

Feature Summary

SuperFET II technology integration for optimized switching performance
Built-in fast recovery body diode functionality
Enhanced avalanche energy capability for robust operation

Applications

High-frequency power supply designs
Motor control applications
Industrial inverter circuits

Procurement Notes

Verify the specific package variant, as sources indicate both TO-220-3 and TO-247-3 configurations for this part number. Confirm manufacturer status, as Fairchild Semiconductor has undergone corporate restructuring affecting product availability and documentation lineage. Ensure compatibility with existing thermal management solutions given the specified power dissipation ratings.

Selection Notes

Select this component for designs requiring high-voltage isolation with moderate current handling capabilities. The SuperFET II architecture offers improved efficiency compared to standard MOSFETs. Consider the thermal resistance characteristics when designing heat sinks, as the TO-220-3 package limits surface area for passive cooling compared to larger packages.

Part Context

This device belongs to the SuperFET II family, which integrates advanced trench gate technology with a fast body diode. Fairchild Semiconductor developed this series to address efficiency demands in switch-mode power supplies. The FCH170N60 represents a specific voltage and current class within this broader portfolio of power switching components.