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Product Detailed Parameters
- Description：MOSFET N-CH 650V 20.6A TO247-3
- Series：SuperFET® II
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：20.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 27A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：82 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3181 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：208W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH190N65F-F085 is an N-Channel SuperFET II FRFET MOSFET manufactured by onsemi. It features a 650 V drain-source voltage rating and supports a continuous drain current of 20.6 A. The device exhibits a maximum on-resistance of 190 mΩ at VGS = 10 V. It utilizes charge balance technology to achieve low conduction losses and optimized switching performance. The component is housed in a TO-220 package and is designed for high-voltage power conversion applications.
Feature Summary
- SuperFET II technology with charge balance architecture
- Optimized body diode reverse recovery characteristics
- High avalanche energy capability
Applications
- Hard and soft-switching DC-DC converters
- Interleaved boost PFC circuits
- HEV/EV automotive boost PFC systems
Procurement Notes
Verify the specific suffix -F085 against the official datasheet to confirm packaging details, as ordering suffixes may indicate variations in tape-and-reel specifications or marking codes. Ensure compatibility with existing thermal management designs given the TO-220 form factor. Confirm RoHS compliance status through the manufacturer's material declaration documents prior to integration.
Selection Notes
Select this component for applications requiring high-voltage isolation with efficient switching capabilities. The SuperFET II structure offers improved dv/dt rates compared to standard planar MOSFETs. Evaluate the 190 mΩ on-resistance against system efficiency targets and ensure the 20.6 A current rating accommodates peak load requirements without exceeding thermal limits.
Part Context
This part belongs to the SuperFET II family from onsemi, which integrates advanced trench gate technology with charge balance principles. The series is engineered to reduce both conduction and switching losses simultaneously. The FCH190N65F variant specifically targets high-power density designs where minimizing component count and improving reliability are critical design constraints.
Replacement Considerations
Direct substitutes include other SuperFET II devices such as FCH077N65F_F085 or FCP150N65F, provided pinout and thermal resistance parameters match the original design requirements. Verify that alternative parts maintain equivalent avalanche energy ratings and reverse recovery characteristics.
