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Product Detailed Parameters
- Description：MOSFET N-CH 600V 20A TO247-3
- Series：SuperFET™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：98 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：3080 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：208W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH20N60 is a 600V N-Channel MOSFET from the SuperFET family, housed in a TO-247 package. It features a continuous drain current of 20A at 25°C case temperature and a maximum pulsed drain current of 60A. The device exhibits a typical static drain-source on-resistance of 0.15Ω and a total gate charge of 75nC. It supports a single pulsed avalanche energy of 690mJ and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Utilizes advanced charge balance mechanism for low on-resistance and reduced gate charge
- Optimized for high efficiency AC/DC power conversion and switching mode operation
- Capable of withstanding extreme dv/dt rates and higher avalanche energy levels
Applications
- AC/DC power conversion systems
- Switching mode power supplies (SMPS)
- System miniaturization designs requiring high efficiency
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm datasheet revision A3 specifications match design requirements. Ensure thermal management aligns with the specified junction-to-case resistance. Check for RoHS compliance status prior to integration into final assemblies.
Selection Notes
Select this component for applications demanding low conduction losses and fast switching speeds. The SuperFET technology provides superior performance compared to standard planar MOSFETs. Consider the TO-247 package for effective heat dissipation in medium-power environments requiring robust avalanche capability.
Part Context
This part belongs to the Fairchild Semiconductor SuperFET family, representing a generation of high-voltage MOSFETs designed for improved efficiency. The FCH20N60 specifically targets the TO-247 form factor, offering a balance between current handling capacity and switching performance for general-purpose power electronics.
Replacement Considerations
The FCA20N60 serves as a functional equivalent utilizing identical electrical characteristics but packaged in TO-3P or TO-3PN formats instead of TO-247.
