FCH35N60

Description：MOSFET N-CH 600V 35A TO247-3
Series：SuperMOS™
Mfr：onsemi
Package：Tube

SKU:747071eba8d7 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 35A TO247-3
Series：SuperMOS™
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：98mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：181 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：6640 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：312.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

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FCH35N60

Overview

The FCH35N60 is an N-channel enhancement mode Power MOSFET from onsemi’s SuperFET II series. It features a 600 V drain-source voltage rating and a continuous drain current of 35 A. The device exhibits a maximum on-resistance of 98 mΩ at 10 V gate drive. Packaged in a TO-247 through-hole housing, it supports high-power switching applications with optimized gate charge characteristics for efficient drive requirements.

Feature Summary

SuperFET II technology integrates logic-level gate drive with low on-resistance
Enhanced thermal performance via robust TO-247 package design
Optimized for high-frequency switching efficiency

Applications

High-efficiency power supply designs
Industrial motor control systems
Uninterruptible power supply (UPS) units

Procurement Notes

Verify component authenticity through authorized distributors or certified secondary market suppliers like Rochester Electronics. Confirm manufacturing date codes and lot traceability to ensure compliance with RoHS standards. Check for obsolescence status as the part may be discontinued by the original manufacturer, requiring careful validation of substitute availability and quality assurance protocols before integration into production.

Selection Notes

Select this component for applications requiring 600 V blocking capability with moderate current handling up to 35 A. The 98 mΩ on-resistance balances conduction losses against switching performance. Ensure gate drive circuits support the required voltage levels for optimal Rds(on) performance. Consider thermal management solutions suitable for the TO-247 package to maintain junction temperatures within specified limits during operation.

Part Context

Part of onsemi’s SuperFET II family, designed to simplify gate drive requirements while maintaining low conduction losses. This series targets cost-sensitive, high-volume industrial and consumer power applications where efficiency and reliability are critical. The FCH35N60 specifically addresses needs for medium-power conversion stages.

Replacement Considerations

The FCH35N60 is listed as obsolete. Recommended substitutes include the NTHL099N60S5. Verify pinout compatibility and electrical parameter alignment when transitioning to alternative components.