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Product Detailed Parameters
- Description：MOSFET N-CH 600V 47A TO247-3
- Series：SuperFET™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：70mOhm @ 23.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：270 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：8000 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：417W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH47N60 is a SuperFET N-channel power MOSFET manufactured by onsemi. It features a 600V drain-source voltage and a continuous drain current of 47A at 25°C case temperature. The device has a maximum static drain-source on-resistance of 0.07Ω at VGS=10V and ID=23.5A, with a typical value of 0.058Ω. It operates within a junction temperature range of -55°C to +150°C and provides a single pulsed avalanche energy rating of 1800mJ.
Feature Summary
- Utilizes advanced charge balance technology for low on-resistance and gate charge
- Optimized for high efficiency AC/DC power conversion in switching mode operation
- Capable of withstanding extreme dv/dt rates and high avalanche energy
Applications
- AC/DC power conversion systems
- Switching mode power supplies
- System miniaturization designs requiring higher efficiency
Procurement Notes
Verify the manufacturer origin as Fairchild Semiconductor or its successor entity onsemi. Confirm the package type matches the required TO-247 form factor. Ensure the component meets RoHS compliance standards if applicable to your manufacturing process. Cross-reference the specific datasheet revision B specifications against your circuit requirements.
Selection Notes
Select this component for applications demanding high voltage handling and robust avalanche performance. The low effective output capacitance supports superior switching speeds. Evaluate thermal management needs based on the specified junction-to-case thermal resistance. Consider the integrated body diode characteristics for synchronous rectification or freewheeling duties.
Part Context
This part belongs to the SuperFET family, representing a generation of high-voltage MOSFETs designed to minimize conduction losses. It serves as an alternative to standard MOSFET technologies by offering improved switching performance and reduced gate charge requirements for efficient power electronics design.
Replacement Considerations
The FCA47N60 is a documented equivalent variant utilizing a TO-3P package instead of TO-247. Verify pinout compatibility and mechanical mounting constraints when substituting between these package types.
