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Product Detailed Parameters
- Description：MOSFET N-CH 600V 47A TO247-3
- Series：SuperFET™
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：75mOhm @ 47A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：250 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：8000 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：417W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH47N60F-F085 is an N-channel SuperFET power MOSFET manufactured by onsemi, housed in a TO-247 package. It features a drain-source voltage rating of 600 V and a continuous drain current of 47 A at case temperature. The device exhibits a maximum on-resistance of 73 mΩ at 10 V gate drive. Key electrical characteristics include a threshold voltage of 4 V and a total gate charge of 151 nC. The component supports a junction temperature range from -55°C to +150°C and offers high avalanche energy capability for robust operation.
Feature Summary
- SuperFET technology integrates the MOSFET and body diode for optimized performance
- Ultra-low on-resistance reduces conduction losses
- Fast switching speeds minimize dynamic power dissipation
- Enhanced avalanche ruggedness improves system reliability
Applications
- High-frequency DC-DC converters
- Uninterruptible power supplies (UPS)
- Motor control applications
Procurement Notes
Verify the specific suffix F085 against official datasheets to confirm packaging details. Ensure compatibility with thermal management requirements given the TO-247 form factor. Confirm RoHS compliance status through manufacturer documentation before integration into regulated environments.
Selection Notes
Select this component for designs requiring high efficiency in hard-switching topologies. Evaluate thermal resistance parameters against heat sink capabilities. Compare gate charge values with driver output strength to ensure adequate switching speed without excessive loss.
Part Context
This part belongs to the SuperFET family, which combines trench MOSFET technology with advanced body diode characteristics. It serves as a replacement for legacy discrete solutions, offering higher power density and improved thermal performance in compact power supply designs.
Replacement Considerations
Check pinout compatibility with existing PCB layouts. Verify that the new on-resistance and gate charge values fit within the original circuit's thermal and drive constraints.
