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Product Detailed Parameters
- Description：MOSFET N-CH 600V 47A TO247-3
- Series：SupreMOS™
- Mfr：onsemi
- Package：Tube,Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：62mOhm @ 23.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：151 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：6700 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：368W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The FCH47N60N is a single N-channel power MOSFET manufactured by onsemi, formerly Fairchild Semiconductor. It features a 600V drain-source voltage rating and a continuous drain current of 47A at case temperature. The device utilizes SupreMOS technology to achieve a maximum on-resistance of 62 milliohms at 10V gate drive. Key electrical characteristics include a gate charge of 151nC and an input capacitance of 6700pF. It is housed in a TO-247 package with a maximum power dissipation of 368W.
Feature Summary
- SupreMOS technology for optimized switching performance
- Integrated body diode for inductive load handling
- Lead-free construction compliant with RoHS standards
Applications
- High-frequency switch-mode power supplies
- Motor control circuits
- DC-DC converter topologies
Procurement Notes
Verify the manufacturer designation carefully, as this component was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the specific part number suffix matches your design requirements, as packaging or minor revisions may exist under different identifiers within the same product family.
Selection Notes
Select this component when a high-voltage N-channel MOSFET with low conduction losses is required. The 600V rating suits general-purpose industrial applications. Ensure the thermal management system can handle the specified power dissipation limits to maintain junction temperatures within the operational range during continuous operation.
Part Context
This device belongs to the SupreMOS series, which integrates advanced trench gate and superjunction technologies. These features are designed to minimize both conduction and switching losses compared to traditional planar MOSFETs. The TO-247 package provides robust mechanical stability and efficient heat transfer capabilities for through-hole mounting.
Replacement Considerations
Equivalent parts from other manufacturers must match the 600V Vdss, 47A Id, and similar Rds(on) specifications. Verify pinout compatibility and thermal resistance values before substitution.
