FCHD125N65S3R0-F155

$2.45

Description：MOSFET N-CH 650V 24A TO247
Series：SuperFET® III
Mfr：onsemi
Package：Tube,Tube

SKU:ce897a1d9f34 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 650V 24A TO247
Series：SuperFET® III
Mfr：onsemi
Package：Tube,Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：125mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：4.5V @ 590µA
Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1940 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：181W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

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FCHD125N65S3R0-F155

Overview

The onsemi FCHD125N65S3R0-F155 is an N-channel enhancement mode MOSFET from the FCH series, designed for high-voltage power switching applications. It features a maximum drain-source voltage (Vds) of 650 V and a continuous drain current (Id) of 24 A at 25°C. The device utilizes Super Junction technology to achieve a low on-resistance (Rds(on)) of 125 mΩ. Packaged in a TO-247 through-hole housing with three pins, it supports a maximum power dissipation of 181 W. Key electrical characteristics include a typical gate charge (Qg) of 46 nC and a forward voltage (Vf) of 1.2 V. The component operates within a temperature range of -55°C to 150°C.

Feature Summary

Super Junction technology enables low conduction losses and efficient switching performance.
High dv/dt rating provides robustness against rapid voltage transients.
Low gate charge facilitates easy driver compatibility and reduced switching energy.

Applications

Telecommunications and server power supplies
Industrial power conversion systems
Uninterruptible Power Supply (UPS) units
Solar energy inverters

Procurement Notes

Verify the exact part number suffix against official onsemi documentation to confirm specific tape-and-reel or tube packaging configurations. Ensure that the requested variant matches the required thermal and mechanical specifications for your PCB layout. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high voltage isolation with moderate current handling capabilities. The TO-247 package is suitable for applications where through-hole mounting and direct heatsinking are preferred over surface-mount solutions. Evaluate the thermal resistance requirements to ensure adequate heat dissipation for the intended duty cycle.

Part Context

This device belongs to the FCH series of Super Junction MOSFETs from onsemi. The series leverages charge balance technology to optimize the trade-off between on-resistance and gate charge. This family is engineered to improve efficiency in hard-switching applications while maintaining reliability under harsh electrical conditions.

Replacement Considerations

Consult official substitution guides for compatible alternatives within the same voltage and current class. Verify pinout compatibility and thermal footprint alignment when considering cross-brand replacements.