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Product Detailed Parameters
- Description：MOSFET N-CH 600V 25A I2PAK
- Series：SupreMOS™
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：125mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：74 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：3352 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：216W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-262 (I2PAK)
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
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Overview
The onsemi FCI25N60N-F102 is an N-channel Power MOSFET from the Supremos family, housed in a TO-262 (I2PAK) through-hole package. It features a 600 V drain-source breakdown voltage and a continuous drain current of 25 A at case temperature. The device exhibits a maximum on-resistance of 125 mΩ at 10 V gate drive. It operates within a junction temperature range of -55°C to +175°C and includes an integrated body diode.
Feature Summary
- High-voltage N-channel conduction capability for robust power switching applications
- Integrated fast-recovery body diode for efficient commutation in inductive loads
- Lead-free packaging compliant with RoHS standards for environmental safety
Applications
- High-frequency DC-DC converters
- Motor control circuits
- Power factor correction stages
Procurement Notes
Verify the specific suffix F102 against the official datasheet to confirm pinout and thermal characteristics. Confirm end-of-life status with the manufacturer prior to final design approval. Ensure component authenticity through authorized distribution channels to avoid counterfeit risks.
Selection Notes
Select this component for designs requiring 600V isolation with moderate current handling. Evaluate thermal management requirements based on the 216W dissipation rating at case temperature. Compare on-resistance values against alternative packages to optimize conduction losses in the target application circuit.
Part Context
This part belongs to onsemi's Supremos line, designed for high-efficiency power conversion. It utilizes advanced trench technology to minimize switching losses while maintaining rugged avalanche performance. The TO-262 package provides reliable mechanical mounting for industrial environments.
Replacement Considerations
Check for direct equivalents such as the FCP25N60N series or other 600V/25A TO-262 MOSFETs from compatible manufacturers. Verify pin compatibility and electrical parameter margins before substitution.
