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Product Detailed Parameters
- Description：MOSFET N-CH 650V 24A 4PQFN
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：125mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 590µA
- Gate Charge (Qg) (Max) @ Vgs：49 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1920 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：181W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：4-PQFN (8x8)
- Package / Case：4-PowerTSFN
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Overview
The FCMT125N65S3 is an N-channel SuperFET III MOSFET from onsemi, utilizing charge balance technology for low conduction and switching losses. It features a 650V drain-source voltage rating and a typical RDS(on) of 125mΩ at VGS=10V. The device supports a continuous drain current of 24A at TC=25°C and handles a pulsed current of 67A. It operates within a junction temperature range of -55°C to +150°C and is housed in a compact Power88 surface-mount package.
Feature Summary
- SuperFET III architecture with charge balance technology for optimized performance
- Low on-resistance and gate charge characteristics for reduced power loss
- High dv/dt capability for robust operation in fast-switching environments
- Power88 surface-mount package design for efficient thermal management
Applications
- AC/DC power conversion systems
- Industrial power supplies
- Uninterruptible power supply (UPS) units
- Solar energy inverters
Procurement Notes
Verify the specific datasheet revision and ordering suffixes when sourcing components. Confirm that the received parts match the exact FCMT125N65S3 designation to ensure compatibility with the intended circuit design. Check for any recent updates regarding compliance standards or manufacturing location changes directly from the supplier documentation.
Selection Notes
Select this component for designs requiring high efficiency in medium-power applications. The combination of low RDS(on) and fast switching makes it suitable for high-frequency converters. Ensure the PCB layout accommodates the Power88 package dimensions and provides adequate thermal relief for the exposed pad to maintain optimal operating temperatures.
Part Context
This part belongs to the SuperFET III family, which integrates intelligent gate drive features to simplify EMI filtering and improve system reliability. The series is designed to replace traditional discrete solutions by offering superior performance in a smaller footprint, supporting miniaturization trends in modern power electronics.
Replacement Considerations
Check for direct pin-compatible alternatives within the same SuperFET III family, such as devices with similar voltage ratings and lower on-resistance values. Verify that any substitute maintains the same Power88 package outline and electrical characteristics to ensure seamless integration without redesigning the printed circuit board.
