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Product Detailed Parameters
- Description：MOSFET N-CH 650V 10A 4PQFN
- Series：SuperFET® III
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：360mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：730 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：83W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：4-PQFN (8x8)
- Package / Case：4-PowerTSFN
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Overview
The FCMT360N65S3 is a single N-channel Power MOSFET from the SuperFET III series, manufactured by onsemi. It features a 650 V drain-source voltage rating and a continuous drain current of 10 A. The device exhibits a maximum on-resistance of 360 mΩ at room temperature. Key electrical characteristics include a gate charge of 18 nC, a threshold voltage of 4.5 V, and a power dissipation capacity of 83 W. The component operates within a temperature range of -55 °C to +150 °C and utilizes a PQFN-4 surface-mount package.
Feature Summary
- Integrates SuperFET III technology for optimized switching performance
- Features low gate charge to facilitate efficient drive requirements
- Provides high thermal stability with an extended operating temperature range
Applications
- High-frequency DC-DC converters
- Power factor correction circuits
- Isolated bridge topologies
Procurement Notes
Verify the specific datasheet revision and ordering information directly with onsemi or authorized distributors. Confirm that the PQFN-4 package dimensions and pinout match the target PCB layout. Ensure compliance with RoHS and REACH regulations as specified in the official documentation before finalizing procurement.
Selection Notes
Select this component when a 650 V rating and low on-resistance are required for high-efficiency power conversion. The SuperFET III architecture offers improved switching losses compared to previous generations. Evaluate the thermal management requirements based on the 83 W power dissipation rating and the specific ambient conditions of the application.
Part Context
This part belongs to the SuperFET III family of trench MOSFETs designed for hard-switching applications. The series focuses on reducing figure-of-merit values through advanced cell design. The FCMT360N65S3 represents a specific configuration within this lineup, balancing voltage handling with conduction losses for general-purpose power electronics.
Replacement Considerations
Consult onsemi documentation for direct replacements within the SuperFET III portfolio. Verify compatibility regarding package footprint, pin assignment, and electrical parameters such as Rds(on) and Vds ratings before substituting.
