FCP11N60N-F102

Description：MOSFET N-CH 600V 10.8A TO220F
Series：-
Mfr：onsemi
Package：Tube

SKU:6197f84ec49c Category: Single FETs, MOSFETs Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 10.8A TO220F
Series：-
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：10.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：299mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：35.6 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1505 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：94W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F
Package / Case：TO-220-3 Full Pack

Download product information

FCP11N60N-F102

Overview

The onsemi FCP11N60N-F102 is a single N-channel SuperFET MOSFET utilizing first-generation high-voltage superjunction technology. It features a 600V drain-source voltage rating and a continuous drain current of 10.8A at 25°C case temperature. The device offers a maximum on-resistance of 430mΩ and a typical gate charge of 40nC. Packaged in a TO-220F (TO-220-3) through-hole housing, it supports a junction temperature range of -55°C to +150°C and includes 100% avalanche testing for reliability.

Feature Summary

Employs first-generation superjunction charge balance technology to achieve low conduction losses and superior switching performance.
Provides enhanced dv/dt capability and higher avalanche energy tolerance compared to standard planar MOSFETs.
Features ultra-low gate charge characteristics that facilitate faster switching speeds and reduced drive power requirements.

Applications

Power Factor Correction (PFC) circuits
Server and telecommunications power supplies
Flat panel television power systems
Industrial power conversion units

Procurement Notes

Verify the specific suffix F102 against the official datasheet to confirm package variant and marking details. Confirm RoHS compliance status as required by your assembly specifications. Check current lifecycle status with the manufacturer, as availability may vary. Ensure thermal management design accounts for the specified power dissipation limits in the chosen mounting configuration.

Selection Notes

Select this component for applications requiring robust high-voltage switching with improved efficiency over traditional planar devices. The TO-220F package suits manual or automated through-hole assembly processes. Evaluate thermal resistance parameters against your heatsink design to ensure operation within the 150°C junction limit under expected load conditions.

Part Context

This part belongs to the SuperFET family from onsemi, representing an evolution from legacy Fairchild Semiconductor designs. The series integrates advanced superjunction architecture into standard discrete packages, bridging the gap between cost-effective planar technologies and premium high-performance solutions for general-purpose power electronics.

Replacement Considerations

Direct substitutes include the FCP11N60 and FCPF11N60 variants within the same product line. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference with other 600V N-channel MOSFETs only if electrical parameters and package dimensions are strictly matched.